Invention Grant
- Patent Title: Methods of manufacturing semiconductor chip
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Application No.: US16359440Application Date: 2019-03-20
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Publication No.: US10854517B2Publication Date: 2020-12-01
- Inventor: Byung-moon Bae , Yoon-sung Kim , Yun-hee Kim , Hyun-su Sim , Jun-ho Yoon , Jung-ho Choi
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Myers Bigel, P.A.
- Priority: KR10-2018-0096824 20180820
- Main IPC: H01L21/78
- IPC: H01L21/78 ; H01L23/00 ; H01L23/532

Abstract:
Methods of manufacturing a semiconductor chip are provided. The methods may include providing a semiconductor substrate including integrated circuit regions and a cut region. The cut region may be between the integrated circuit regions. The methods may also include forming a modified layer by emitting a laser beam into the semiconductor substrate along the cut region, polishing an inactive surface of the semiconductor substrate to propagate a crack from the modified layer, and separating the integrated circuit regions along the crack. The cut region may include a plurality of multilayer metal patterns on an active surface of the semiconductor substrate, which is opposite to the inactive surface of the semiconductor substrate. The plurality of multilayer metal patterns may form a pyramid structure when viewed in cross section.
Public/Granted literature
- US20200058551A1 METHODS OF MANUFACTURING SEMICONDUCTOR CHIP Public/Granted day:2020-02-20
Information query
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