- 专利标题： Component for use in plasma processing apparatus, plasma processing apparatus, and method for manufacturing the component
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申请号： US14795062申请日： 2015-07-09
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公开(公告)号： US10808309B2公开(公告)日： 2020-10-20
- 发明人: Koji Mitsuhashi , Satoshi Nishimura
- 申请人： TOKYO ELECTRON LIMITED
- 申请人地址： JP Tokyo
- 专利权人： TOKYO ELECTRON LIMITED
- 当前专利权人： TOKYO ELECTRON LIMITED
- 当前专利权人地址： JP Tokyo
- 代理机构： Rothwell, Figg, Ernst & Manbeck, P.C.
- 优先权： com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@770c3c18 com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@72f21d53
- 主分类号： C23C4/11
- IPC分类号： C23C4/11 ; H01J37/32 ; C23C4/12 ; C23C4/06 ; C23C4/18 ; C23C4/02 ; C25D11/04 ; C23C16/455
摘要：
A component for use in a plasma processing apparatus, which is to be exposed to a plasma, includes a base material, an alumite layer and a thermally sprayed film. The base material has a plurality of through holes and a rough surface at which one end of each of the through holes is opended. The alumite layer is formed on a surface of the base material having the rough surface by an anodic oxidation process. The thermally sprayed film is formed on the rough surface with the alumite layer therebetween.
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