- 专利标题： Methods for removing particles from etching chamber
-
申请号： US15942841申请日： 2018-04-02
-
公开(公告)号： US10790124B2公开(公告)日： 2020-09-29
- 发明人: Yu Chao Lin , Yuan-Ming Chiu , Ming-Ching Chang , Hsin-Yi Tsai , Chao-Cheng Chen
- 申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Slater Matsil, LLP
- 主分类号： H01J37/32
- IPC分类号： H01J37/32 ; H01L21/3213 ; H01L21/67 ; H01L21/3065
摘要：
A method includes forming a coating layer in a dry etching chamber, placing a wafer into the dry etching chamber, etching a metal-containing layer of the wafer, and moving the wafer out of the dry etching chamber. After the wafer is moved out of the dry etching chamber, the coating layer is removed.
公开/授权文献
- US20180226235A1 Methods for Removing Particles from Etching Chamber 公开/授权日：2018-08-09
信息查询
