发明授权
- 专利标题: Image sensor
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申请号: US16122215申请日: 2018-09-05
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公开(公告)号: US10785432B2公开(公告)日: 2020-09-22
- 发明人: Jung wook Lim , Sung Soo Choi , Eun Sub Shim , Jung Bin Yun , Sung-Ho Choi
- 申请人: Samsung Electronics Co., Ltd.
- 申请人地址: KR Suwon-si, Gyeonggi-do
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Suwon-si, Gyeonggi-do
- 代理机构: Lee IP Law, PC
- 优先权: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@576194d7
- 主分类号: H04N5/359
- IPC分类号: H04N5/359 ; H04N5/357 ; H04N5/374 ; H04N5/378
摘要:
An image sensor includes a photoelectric converter to generate charges in response to incident light and to provide the generated charges to a first node, a transfer transistor to provide a voltage of the first node to a floating diffusion node based on a first control signal, a source follower transistor to provide a voltage of the floating diffusion node as a unit pixel output, a correlated double sampler (CDS) to receive the unit pixel output and to convert the unit pixel output into a digital code. The first control signal having first, second, and third voltages is maintained at the second voltage in a period between when the voltage of the first node is provided to the floating diffusion node and when the CDS is provided with the voltage of the first node as the unit pixel output.
公开/授权文献
- US20190230302A1 IMAGE SENSOR 公开/授权日:2019-07-25
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