- 专利标题: High speed and high voltage driver
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申请号: US16201921申请日: 2018-11-27
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公开(公告)号: US10784861B2公开(公告)日: 2020-09-22
- 发明人: Gary Chunshien Wu
- 申请人: pSemi Corporation
- 申请人地址: US CA San Diego
- 专利权人: pSemi Corporation
- 当前专利权人: pSemi Corporation
- 当前专利权人地址: US CA San Diego
- 代理机构: Jaquez Land Greenhaus LLP
- 代理商 Alessandro Steinfl, Esq.
- 主分类号: H03K17/687
- IPC分类号: H03K17/687 ; H02M1/088 ; H03K17/10 ; H03K19/0175
摘要:
Systems, methods, and apparatus for biasing a high speed and high voltage driver using only low voltage transistors are described. The apparatus and method are adapted to control biasing voltages to the low voltage transistors such as not to exceed operating voltages of the low voltage transistors while allowing for DC to high speed operation of the driver at high voltage. A stackable and modular architecture of the driver and biasing stages is provided which can grow with a higher voltage requirement of the driver. Capacitive voltage division is used for high speed bias voltage regulation during transient phases of the driver, and resistive voltage division is used to provide bias voltage at steady state. A simpler open-drain configuration is also presented which can be used in pull-up or pull-down modes.
公开/授权文献
- US20190363710A1 High Speed and High Voltage Driver 公开/授权日:2019-11-28
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