- 专利标题: GaN FET gate driver for self-oscillating converters
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申请号: US16114718申请日: 2018-08-28
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公开(公告)号: US10784794B2公开(公告)日: 2020-09-22
- 发明人: Michael A. de Rooij
- 申请人: Efficient Power Conversion Corporation
- 申请人地址: US CA El Segundo
- 专利权人: Efficient Power Conversion Corporation
- 当前专利权人: Efficient Power Conversion Corporation
- 当前专利权人地址: US CA El Segundo
- 代理机构: Blank Rome LLP
- 主分类号: H02M7/217
- IPC分类号: H02M7/217 ; H02M1/088 ; H02M1/08
摘要:
A power converter in which two power FETs are provided in a full bridge arrangement with two diodes for supplying a rectified voltage to a load. The gates of the power FETs receive alternating and opposite voltage waveforms such that the power FETs conduct oppositely to each other. A turn-off FET is connected to the gate of each power FET to prevent spurious turn on of the power FET during periods in which the opposite power FET is turned on. A voltage sense FET is also connected to the gate of each power FET to limit the gate voltage of the power FET. The voltage sense FETs are each synchronously modulated with the corresponding power FET to limit the gate to source voltage of the voltage sense FET when the corresponding turn-off FET is on and the corresponding power FET is off.
公开/授权文献
- US20190068075A1 GaN FET GATE DRIVER FOR SELF-OSCILLATING CONVERTERS 公开/授权日:2019-02-28
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