Provided is a photoelectric conversion apparatus including: an interlayer insulating film that covers a semiconductor layer and has a contact hole positioned above a gate electrode; a contact plug that is disposed in the contact hole and connected to the gate electrode; a light-shielding film that is positioned between the interlayer insulating film and the semiconductor layer and includes a first part covering a charge holding portion and a second part covering an upper surface of the gate electrode; and a dielectric layer that is positioned between the second part and the gate electrode, in which a relative dielectric constant of the dielectric layer is lower than a relative dielectric constant of the interlayer insulating film.