- 专利标题: TFT substrate and manufacturing method thereof
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申请号: US15743918申请日: 2017-12-14
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公开(公告)号: US10784287B2公开(公告)日: 2020-09-22
- 发明人: Hongyuan Xu
- 申请人: Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd.
- 申请人地址: CN Shenzhen
- 专利权人: SHENZHEN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECHNOLOGY CO., LTD.
- 当前专利权人: SHENZHEN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECHNOLOGY CO., LTD.
- 当前专利权人地址: CN Shenzhen
- 代理机构: Hemisphere Law, PLLC
- 代理商 Zhigang Ma
- 优先权: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@ca9db4f
- 国际申请: PCT/CN2017/116283 WO 20171214
- 国际公布: WO2019/095482 WO 20190523
- 主分类号: H01L27/12
- IPC分类号: H01L27/12 ; H01L27/32 ; G02F1/1343
摘要:
A TFT substrate and a manufacturing method thereof provided, including: depositing a metal thin film and a transparent conductive thin film on TFTs sequentially; coating a photoresist on the transparent conductive thin film, exposing and developing the photoresist via a half-tone mask to obtain a first photoresist layer and a second photoresist layer; etching the transparent conductive thin film and the metal thin film not covered by the first photoresist layer and the second photoresist layer; ashing the first photoresist layer and the second photoresist layer to remove the second photoresist layer; etching the transparent conductive thin film to expose the metal thin film not covered by the first photoresist layer; oxidizing the metal thin film to form a metal oxide thin film as a passivation layer; and stripping off the first photoresist layer to expose the metal thin film and the transparent conductive thin film as the pixel electrode.
公开/授权文献
- US20200083254A1 TFT SUBSTRATE AND MANUFACTURING METHOD THEREOF 公开/授权日:2020-03-12
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