- 专利标题: Highly integrated RF power and power conversion based on Ga2O3 technology
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申请号: US16435666申请日: 2019-06-10
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公开(公告)号: US10784245B2公开(公告)日: 2020-09-22
- 发明人: Gregg H Jessen
- 申请人: Government of the United States, as represented by the Secretary of the Air Force
- 申请人地址: US OH Wright-Patterson AFB
- 专利权人: United States of America as represented by the Secretary of the Air Force
- 当前专利权人: United States of America as represented by the Secretary of the Air Force
- 当前专利权人地址: US OH Wright-Patterson AFB
- 代理机构: AFMCLO/JAZ
- 代理商 Charles Figer, Jr.
- 主分类号: H01L25/18
- IPC分类号: H01L25/18 ; H01L23/00 ; H01L23/14 ; H01L23/373
摘要:
An integrated circuit is provided including a first substrate with a first thermal conductivity. An active layer is deposited on the first substrate. At least one native device is fabricated on the active layer. A window is formed in the active layer, which exposes a portion of the first substrate. A non-native device is fabricated on a second substrate with a second thermal conductivity lower than the first thermal conductivity. The non-native device is flip-chip mounted in the widow on the first substrate and electrically connected to the at least one native device. The non-native device is also thermally connected to the first substrate such that heat generated by the non-native device is removed through the first substrate.
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