- 专利标题: Die encapsulation in oxide bonded wafer stack
-
申请号: US16363356申请日: 2019-03-25
-
公开(公告)号: US10784234B2公开(公告)日: 2020-09-22
- 发明人: John J. Drab , Jason G. Milne
- 申请人: Raytheon Company
- 申请人地址: US MA Waltham
- 专利权人: Raytheon Company
- 当前专利权人: Raytheon Company
- 当前专利权人地址: US MA Waltham
- 代理机构: Bums & Levinson, LLP
- 代理商 Joseph M. Maraia
- 主分类号: H01L25/065
- IPC分类号: H01L25/065 ; H01L23/31 ; H01L21/56 ; H01L21/78 ; H01L23/10 ; H01L21/50 ; H01L21/54 ; H01L23/00 ; H01L25/00
摘要:
Structures and methods of fabricating semiconductor wafer assemblies that encapsulate one or die in a cavity etched into an oxide bonded semiconductor wafer stack. The methods generally include the steps of positioning the die in the cavity, mechanically and electrically mounting the die to the wafer stack, and encapsulating the die within the cavity by bonding a lid wafer to the wafer stack in one of multiple ways. Semiconductor processing steps are applied to construct the assemblies (e.g., deposition, annealing, chemical and mechanical polishing, etching, etc.) and connecting the die (e.g., bump bonding, wire interconnecting, ultrasonic bonding, oxide bonding, etc.) according to the embodiments described above.
公开/授权文献
- US20190221547A1 DIE ENCAPSULATION IN OXIDE BONDED WAFER STACK 公开/授权日:2019-07-18
信息查询
IPC分类: