- 专利标题： Method for producing a buried cavity structure
-
申请号： US16029237申请日： 2018-07-06
-
公开(公告)号： US10784147B2公开(公告)日： 2020-09-22
- 发明人: Ines Uhlig , Kerstin Kaemmer , Norbert Thyssen
- 申请人： Infineon Technologies AG
- 申请人地址： DE Neubiberg
- 专利权人： Infineon Technologies AG
- 当前专利权人： Infineon Technologies AG
- 当前专利权人地址： DE Neubiberg
- 代理机构： Slater Matsil, LLP
- 优先权： com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@2c8bffbb
- 主分类号： H01L21/762
- IPC分类号： H01L21/762 ; H01L21/768 ; H01L21/3105 ; H01L21/306 ; H01L21/3065
摘要：
In accordance with an embodiment, a method for producing a buried cavity structure includes providing a mono-crystalline semiconductor substrate, producing a doped volume region in the mono-crystalline semiconductor substrate, wherein the doped volume region has an increased etching rate for a first etchant by comparison with an adjoining, undoped or more lightly doped material of the monocrystalline semiconductor substrate, forming an access opening to the doped volume region, and removing the doped semiconductor material in the doped volume region using the first etchant through the access opening to obtain the buried cavity structure.
公开/授权文献
- US20190027399A1 METHOD FOR PRODUCING A BURIED CAVITY STRUCTURE 公开/授权日：2019-01-24
信息查询
IPC分类:
