Invention Grant
- Patent Title: Photoresist and method of formation and use
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Application No.: US15156019Application Date: 2016-05-16
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Publication No.: US10761427B2Publication Date: 2020-09-01
- Inventor: Keng-Chu Lin , Joung-Wei Liou , Cheng-Han Wu , Ya Hui Chang
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater Matsil, LLP
- Main IPC: G03F7/038
- IPC: G03F7/038 ; H01L21/027 ; H01L21/311 ; H01L21/3213 ; G03F7/039 ; G03F7/11 ; G03F7/16 ; G03F7/20 ; G03F7/32

Abstract:
A system and method for depositing a photoresist and utilizing the photoresist are provided. In an embodiment a deposition chamber is utilized along with a first precursor material comprising carbon-carbon double bonds and a second precursor material comprising repeating units to deposit the photoresist onto a substrate. The first precursor material is turned into a plasma in a remote plasma chamber prior to being introduced into the deposition chamber. The resulting photoresist comprises a carbon backbone with carbon-carbon double bonds.
Public/Granted literature
- US20160259246A1 Photoresist and Method of Formation and Use Public/Granted day:2016-09-08
Information query
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