Invention Grant
- Patent Title: Method of writing in a non-volatile memory device and corresponding non-volatile memory device
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Application No.: US15900481Application Date: 2018-02-20
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Publication No.: US10732894B2Publication Date: 2020-08-04
- Inventor: François Tailliet , Marc Battista
- Applicant: STMicroelectronics (Rousset) SAS
- Applicant Address: FR Rousset
- Assignee: STMICROELECTRONICS (ROUSSET) SAS
- Current Assignee: STMICROELECTRONICS (ROUSSET) SAS
- Current Assignee Address: FR Rousset
- Agency: Slater Matsil, LLP
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@18baeb74
- Main IPC: G11C29/00
- IPC: G11C29/00 ; G06F3/06 ; G06F11/10 ; G11C29/52 ; G06F12/02

Abstract:
A method of writing in a memory of the EEPROM type includes, in the presence of a string of new bytes to be written in the memory plane in at least one destination memory word already containing old bytes, a verification for each destination memory word whether or not the old bytes of this destination memory word must all be replaced with new bytes. The method also includes a reading of the old bytes of this destination memory word only if the old bytes must not all be replaced with new bytes.
Public/Granted literature
- US20180300085A1 METHOD OF WRITING IN A NON-VOLATILE MEMORY DEVICE AND CORRESPONDING NON-VOLATILE MEMORY DEVICE Public/Granted day:2018-10-18
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