Invention Grant
- Patent Title: Wafer-level high aspect ratio beam shaping
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Application No.: US16399937Application Date: 2019-04-30
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Publication No.: US10705347B2Publication Date: 2020-07-07
- Inventor: Tong Chen , Wenrui Cai , Albert P. Heberle , Weiping Li
- Applicant: Apple Inc.
- Applicant Address: US CA Cupertino
- Assignee: Apple Inc.
- Current Assignee: Apple Inc.
- Current Assignee Address: US CA Cupertino
- Agency: Brownstein Hyatt Faber Schreck, LLP
- Main IPC: G02B27/09
- IPC: G02B27/09 ; F21V5/00 ; F21V5/04 ; F21Y115/30 ; F21Y115/15

Abstract:
A light-emitting device includes a semiconductor substrate, a surface-emitting semiconductor light source on the semiconductor substrate, a monolithic first dielectric, and a second dielectric. The monolithic first dielectric is transparent to light emitted by the light source and includes first and second micro-lenses adjacent an aperture of the light source and having axes parallel to and offset from an axis of a beam of light emitted by the light source, and a saddle-shaped lens over the aperture of the light source. The saddle-shaped lens connects the first and second micro-lenses and reshapes the beam of light emitted by the light source to have a high aspect ratio. The second dielectric is transparent to light emitted by the light source and encapsulates a light emission surface of the saddle-shaped lens. The second dielectric has a higher refractive index than the monolithic first dielectric.
Public/Granted literature
- US20190369405A1 Wafer-Level High Aspect Ratio Beam Shaping Public/Granted day:2019-12-05
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