- 专利标题： Substrate processing method and substrate processing apparatus
-
申请号： US16019773申请日： 2018-06-27
-
公开(公告)号： US10685858B2公开(公告)日： 2020-06-16
- 发明人: Hiroyuki Higashi , Takahisa Otsuka , Kazuyoshi Shinohara , Takashi Nakazawa , Seiya Fujimoto , Yuichi Douki
- 申请人： Tokyo Electron Limited
- 申请人地址： JP Tokyo
- 专利权人： TOKYO ELECTRON LIMITED
- 当前专利权人： TOKYO ELECTRON LIMITED
- 当前专利权人地址： JP Tokyo
- 代理机构： Abelman, Frayne & Schwab
- 优先权： com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@4bb3b53f
- 主分类号： H01L21/67
- IPC分类号： H01L21/67 ; H01L21/3065 ; H01L21/306
摘要：
The substrate processing method according to an exemplary embodiment includes a low temperature dissolving processing and an etching processing. The low temperature dissolving processing dissolves oxygen in an alkaline aqueous solution cooled to a predetermined temperature lower than the room temperature. The etching processing etches a substrate by supplying the alkaline aqueous solution in which oxygen is dissolved to the substrate.
公开/授权文献
信息查询
IPC分类:
