Invention Grant
- Patent Title: Integrated device and method of forming the same
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Application No.: US16020132Application Date: 2018-06-27
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Publication No.: US10678991B2Publication Date: 2020-06-09
- Inventor: Chun-Yao Ku , Wen-Hao Chen , Ming-Tao Yu , Shao-Huan Wang , Jyun-Hao Chang
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee Address: TW Hsinchu
- Agency: WPAT, P.C., Intellectual Property Attorneys
- Agent Anthony King
- Main IPC: G06F17/50
- IPC: G06F17/50 ; G06F30/398 ; G06F30/394 ; G06F119/10

Abstract:
A method of forming an integrated device includes: pre-storing a plurality of via pillars in a storage tool; arranging a first via pillar selected from the plurality of via pillars to electrically connect to a circuit cell in a first circuit; analyzing electromigration (EM) information of the first circuit to determine if the first via pillar induces an EM phenomenon; arranging a second via pillar selected from the plurality of via pillars to replace the first via pillar of the circuit cell to generate a second circuit when the first via pillar induces the EM phenomenon; and generating the integrated device according to the second circuit.
Public/Granted literature
- US20200004917A1 INTEGRATED DEVICE AND METHOD OF FORMING THE SAME Public/Granted day:2020-01-02
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