- 专利标题： Prevention of premature breakdown of interline porous dielectrics in an integrated circuit
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申请号： US15722703申请日： 2017-10-02
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公开(公告)号： US10600737B2公开(公告)日： 2020-03-24
- 发明人: Christian Rivero , Pascal Fornara , Jean-Philippe Escales
- 申请人： STMicroelectronics (Rousset) SAS
- 申请人地址： FR Rousset
- 专利权人： STMicroelectronics (Rousset) SAS
- 当前专利权人： STMicroelectronics (Rousset) SAS
- 当前专利权人地址： FR Rousset
- 代理机构： Crowe & Dunlevy
- 优先权： FR1559337 20151001
- 主分类号： H01L21/31
- IPC分类号： H01L21/31 ; H01L23/532 ; H01L21/768 ; H01L21/02 ; H01L23/522 ; H01L23/528
摘要：
A non-porous dielectric barrier is provided between a porous portion of a dielectric region and an electrically conductive element of an interconnect portion of an integrated circuit. This non-porous dielectric barrier protects the integrated circuit from breakdown of the least one dielectric region caused by electrical conduction assisted by the presence of defects located in the at least one dielectric region.
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