Invention Grant
- Patent Title: Thin film transistor, fabricating method and driving method thereof, and display device
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Application No.: US15941340Application Date: 2018-03-30
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Publication No.: US10586937B2Publication Date: 2020-03-10
- Inventor: Defeng Mao
- Applicant: BOE Technology Group Co., Ltd.
- Applicant Address: CN Beijing
- Assignee: BOE TECHNOLOGY GROUP CO., LTD.
- Current Assignee: BOE TECHNOLOGY GROUP CO., LTD.
- Current Assignee Address: CN Beijing
- Agency: Nath, Goldberg & Meyer
- Agent Joshua B. Goldberg
- Priority: CN201710818794 20170912
- Main IPC: H01L51/05
- IPC: H01L51/05 ; H01L27/12 ; H01L51/00 ; H01L51/10

Abstract:
The present application provides a thin film transistor, a method for fabricating the same, a method for driving the same, and a display device. The thin film transistor includes a gate pattern, a gate insulation layer, an active layer pattern, a source/drain pattern, and a passivation layer. The active layer pattern is made of a carbon nanotube material, and the passivation layer is made of a charge-resistant material capable of reducing mobile charges on a surface of the carbon nanotube material.
Public/Granted literature
- US20190081259A1 THIN FILM TRANSISTOR, FABRICATING METHOD AND DRIVING METHOD THEREOF, AND DISPLAY DEVICE Public/Granted day:2019-03-14
Information query
IPC分类: