- 专利标题: Techniques for detecting micro-arcing occurring inside a semiconductor processing chamber
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申请号: US16232404申请日: 2018-12-26
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公开(公告)号: US10559453B2公开(公告)日: 2020-02-11
- 发明人: Feng-Kuang Wu , Chih-Kuo Chang , Hsu-Shui Liu , Jiun-Rong Pai , Shou-Wen Kuo , Sing-Tsung Li
- 申请人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 申请人地址: TW Hsin-Chu
- 专利权人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人地址: TW Hsin-Chu
- 代理机构: Eschweiler & Potashnik, LLC
- 主分类号: H01J37/32
- IPC分类号: H01J37/32
摘要:
Some embodiments relate to a system. The system includes a radio frequency (RF) generator configured to output a RF signal. A transmission line is coupled to the RF generator. A plasma chamber is coupled to RF generator via the transmission line, wherein the plasma chamber is configured to generate a plasma based on the RF signal. A micro-arc detecting element is configured to determine whether a micro-arc has occurred in the plasma chamber based on the RF signal.
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