- 专利标题: Molybdenum selenide sublayers with controlled thickness in solar cells and methods for forming the same
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申请号: US13677361申请日: 2012-11-15
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公开(公告)号: US10546964B2公开(公告)日: 2020-01-28
- 发明人: Shih-Wei Chen , Wen-Chin Lee , Wen-Tsai Yen , Chung-Hsien Wu , Kuan-Chu Chen
- 申请人: Shih-Wei Chen , Wen-Chin Lee , Wen-Tsai Yen , Chung-Hsien Wu , Kuan-Chu Chen
- 申请人地址: TW Hsin-Chu
- 专利权人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人地址: TW Hsin-Chu
- 代理机构: Duane Morris LLP
- 主分类号: H01L31/032
- IPC分类号: H01L31/032 ; H01L31/0749 ; H01L31/0392 ; H01L31/0224
摘要:
A solar cell with a molybdenum back electrode layer and a molybdenum selenide ohmic contact layer over the molybdenum back electrode, is provided. The molybdenum selenide layer includes an accurately controlled thickness. A distinct interface exists between the molybdenum back electrode layer and the molybdenum silicide layer. The molybdenum silicide layer is produced by forming a molybdenum layer or a molybdenum nitride layer or a molybdenum oxide layer over an initially formed molybdenum layer such that an interface exists between the two layers. A selenization and sulfurization process is carried out to selectively convert the molybdenum-containing layer to molybdenum selenide but not the original molybdenum back electrode layer which remains as a molybdenum layer.
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