- 专利标题： Non-volatile memory device and method of fabricating the same
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申请号： US15647692申请日： 2017-07-12
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公开(公告)号： US10546934B2公开(公告)日： 2020-01-28
- 发明人: Woo Young Choi
- 申请人： SK hynix Inc. , SOGANG UNIVERSITY RESEARCH FOUNDATION
- 申请人地址： KR Icheon KR Seoul
- 专利权人： SK hynix Inc.,SOGANG UNIVERSITY RESEARCH FOUNDATION
- 当前专利权人： SK hynix Inc.,SOGANG UNIVERSITY RESEARCH FOUNDATION
- 当前专利权人地址： KR Icheon KR Seoul
- 优先权： KR10-2016-0088850 20160713
- 主分类号： H01L27/11582
- IPC分类号： H01L27/11582 ; H01L29/792 ; H01L21/28 ; H01L27/1157 ; G11C16/04 ; H01L27/06 ; H01L27/115 ; H01L27/11568
摘要：
Provided are a non-volatile memory device and a method of fabricating the same. The non-volatile memory includes a channel layer, a data storage layer disposed on the channel layer, a plurality of control gates arranged on the data storage layer and spaced apart from one another, and conductive cover layers disposed on sidewalls of the control gates facing each other. The plurality of control gates includes a first conductor having a first work function. The conductive cover layers include a second conductor having a second work function that is greater than the first work function.
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