- 专利标题： Opening in a multilayer polymeric dielectric layer without delamination
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申请号： US15293557申请日： 2016-10-14
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公开(公告)号： US10546821B2公开(公告)日： 2020-01-28
- 发明人: Licheng Marshal Han , Michael Andrew Serafin , Byron Williams , Sandra Rodriguez Varela , Salvatore Pavone
- 申请人： Texas Instruments Incorporated
- 申请人地址： US TX Dallas
- 专利权人： TEXAS INSTRUMENTS INCORPORATED
- 当前专利权人： TEXAS INSTRUMENTS INCORPORATED
- 当前专利权人地址： US TX Dallas
- 代理商 Jacqueline J. Garner; Charles A. Brill; Frank D. Cimino
- 主分类号： H01L23/00
- IPC分类号： H01L23/00 ; H01L23/31 ; H01L23/532 ; H01L49/02 ; H01L21/768 ; H01L21/311 ; H01L21/56 ; H01L23/29 ; H01L21/784 ; H01L23/522
摘要：
An integrated circuit and method with a delamination free opening formed through multiple levels of polymer dielectric. The opening has a vertical sidewall and no interface between adjacent levels of polymer dielectric is exposed on the vertical sidewall.
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