- 专利标题： Semiconductor substrate with electrically isolating dielectric partition
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申请号： US15356527申请日： 2016-11-18
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公开(公告)号： US10546816B2公开(公告)日： 2020-01-28
- 发明人: Hans-Martin Ritter , Joachim Utzig , Frank Burmeister , Godfried Henricus Josephus Notermans , Jochen Wynants , Rainer Mintzlaff
- 申请人： Nexperia B.V.
- 申请人地址： NL Nijmegen
- 专利权人： Nexperia B.V.
- 当前专利权人： Nexperia B.V.
- 当前专利权人地址： NL Nijmegen
- 代理机构： Ohlandt, Greeley, Ruggiero & Perle, L.L.P.
- 优先权： EP15200095 20151215
- 主分类号： H01L23/538
- IPC分类号： H01L23/538 ; H01L21/78 ; H01L23/29 ; H01L29/872 ; H01L29/20 ; H01L23/31 ; H01L29/205 ; H01L29/06
摘要：
A semiconductor device and a method of making the same. The device includes a substrate comprising a major surface and a backside. The device also includes a dielectric partition for electrically isolating a first part of the substrate from a second part of the substrate. The dielectric partition extends through the substrate from the major surface to the backside.
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