- 专利标题： Low resistance interconnect structure with partial seed enhancement liner
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申请号： US15994638申请日： 2018-05-31
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公开(公告)号： US10546815B2公开(公告)日： 2020-01-28
- 发明人: Oscar van der Straten , Joseph F. Maniscalco , Koichi Motoyama , Alexander Reznicek
- 申请人： International Business Machines Corporation
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Scully, Scott, Murphy & Presser, P.C.
- 代理商 L. Jeffrey Kelly, Esq.
- 主分类号： H01L23/532
- IPC分类号： H01L23/532 ; H01L21/768 ; H01L21/3213
摘要：
A method which exploits the benefits of a seed enhancement layer (in terms of void-free copper fill), while preventing copper volume loss during planarization, is provided. The method includes forming a partial seed enhancement liner in a lower portion of an opening that contains a recessed copper portion. Additional copper is formed in the upper portion of the opening providing a copper structure in which no copper volume loss at the uppermost interface of the copper structure is observed.
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