- 专利标题： High resistivity silicon-on-insulator substrate having enhanced charge trapping efficiency
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申请号： US15727723申请日： 2017-10-09
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公开(公告)号： US10546771B2公开(公告)日： 2020-01-28
- 发明人: Gang Wang , Jeffrey L. Libbert , Shawn George Thomas , Qingmin Liu
- 申请人： SunEdison Semiconductor Limited (UEN201334164H)
- 申请人地址： TW Hsinchu
- 专利权人： GlobalWafers Co., Ltd.
- 当前专利权人： GlobalWafers Co., Ltd.
- 当前专利权人地址： TW Hsinchu
- 代理机构： Armstrong Teasdale LLP
- 主分类号： H01L21/762
- IPC分类号： H01L21/762 ; H01L21/02 ; H01L27/12
摘要：
A multilayer semiconductor on insulator structure is provided in which the handle substrate and an epitaxial layer in interfacial contact with the handle substrate comprise electrically active dopants of opposite type. The epitaxial layer is depleted by the handle substrate free carriers, thereby resulting in a high apparent resistivity, which improves the function of the structure in RF devices.
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