- 专利标题： Method and device isolation structure in finFET
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申请号： US15969419申请日： 2018-05-02
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公开(公告)号： US10546770B2公开(公告)日： 2020-01-28
- 发明人: Min Gyu Sung
- 申请人： Varian Semiconductor Equipment Associates, Inc.
- 申请人地址： US MA Gloucester
- 专利权人： VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
- 当前专利权人： VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
- 当前专利权人地址： US MA Gloucester
- 主分类号： H01L29/06
- IPC分类号： H01L29/06 ; H01L21/762 ; H01L29/66 ; H01L21/3065
摘要：
A method of forming a semiconductor device. The method may include providing a semiconductor device structure. The semiconductor device structure may include a semiconductor fin; and a mask, disposed over the semiconductor fin, the mask defining a plurality of openings, wherein the semiconductor fin is exposed in the plurality of openings. The method may further include directing angled ions into the plurality of openings, wherein a plurality of trenches are formed in the semiconductor fin, wherein a given trench of the plurality of trenches comprises a reentrant profile.
公开/授权文献
- US20190341295A1 METHOD AND DEVICE ISOLATION STRUCTURE IN FINFET 公开/授权日：2019-11-07
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