- 专利标题： Method of removing silicon oxide film
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申请号： US16038863申请日： 2018-07-18
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公开(公告)号： US10546753B2公开(公告)日： 2020-01-28
- 发明人: Hideaki Yamasaki , Takamichi Kikuchi , Seishi Murakami
- 申请人： TOKYO ELECTRON LIMITED
- 申请人地址： JP Tokyo
- 专利权人： TOKYO ELECTRON LIMITED
- 当前专利权人： TOKYO ELECTRON LIMITED
- 当前专利权人地址： JP Tokyo
- 代理机构： Nath, Goldberg & Meyer
- 代理商 Jerald L. Meyer
- 优先权： JP2017-142746 20170724
- 主分类号： H01L21/311
- IPC分类号： H01L21/311 ; H01L21/02 ; H01L21/768 ; H01J37/00 ; H01L21/67 ; H01L21/683
摘要：
Provided is a method of removing a silicon oxide film of a workpiece having an insulating film and the silicon oxide film exposed at a bottom portion of an opening formed in the insulating film, including: forming a protective film containing carbon on a surface of the workpiece, wherein the protective film has a first region extending along a side wall surface of the insulating film that defines the opening and a second region extending on the silicon oxide film: removing the second region of the protective film and the silicon oxide film by sputter etching with ions from plasma of a first inert gas; and removing a residue of the silicon oxide film by chemical etching. The step of forming the protective film includes executing a plurality of cycles.
公开/授权文献
- US10504740B2 Method of removing silicon oxide film 公开/授权日：2019-12-10
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