发明授权
- 专利标题： Process for deposition of titanium oxynitride for use in integrated circuit fabrication
-
申请号： US16268260申请日： 2019-02-05
-
公开(公告)号： US10546744B2公开(公告)日： 2020-01-28
- 发明人: Viljami J. Pore , Seiji Okura , Hidemi Suemori
- 申请人： ASM IP Holding B.V.
- 申请人地址： NL Almere
- 专利权人： ASM IP Holding B.V.
- 当前专利权人： ASM IP Holding B.V.
- 当前专利权人地址： NL Almere
- 代理机构： Knobbe, Martens, Olson & Bear LLP
- 主分类号： H01L21/02
- IPC分类号： H01L21/02 ; H01L21/311 ; C23C16/30 ; C23C16/455 ; H01L21/28 ; H01L21/033
摘要：
A process is provided for depositing a substantially amorphous titanium oxynitride thin film that can be used, for example, in integrated circuit fabrication, such as in forming spacers in a pitch multiplication process. The process comprises contacting the substrate with a titanium reactant and removing excess titanium reactant and reaction byproducts, if any. The substrate is then contacted with a second reactant which comprises reactive species generated by plasma, wherein one of the reactive species comprises nitrogen. The second reactant and reaction byproducts, if any, are removed. The contacting and removing steps are repeated until a titanium oxynitride thin film of desired thickness has been formed.
公开/授权文献
信息查询
IPC分类:
