- 专利标题: Microstructure manufacturing method and microstructure manufacturing apparatus
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申请号: US15914513申请日: 2018-03-07
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公开(公告)号: US10546721B2公开(公告)日: 2020-01-28
- 发明人: Keiji Watanabe , Hiroyasu Shichi , Daisuke Ryuzaki
- 申请人: Hitachi, Ltd.
- 申请人地址: JP Tokyo
- 专利权人: Hitachi, Ltd.
- 当前专利权人: Hitachi, Ltd.
- 当前专利权人地址: JP Tokyo
- 代理机构: Crowell & Moring LLP
- 优先权: JP2017-046223 20170310
- 主分类号: H01J37/317
- IPC分类号: H01J37/317 ; H01J37/04 ; H01J37/30
摘要:
The present invention provides a technology for avoiding radiation of an ion beam at a position other than a desired processing position. A microstructure manufacturing method includes a step of radiating an ion beam to a sample; a step of supplying a gas to the sample; a step of stopping supplying the gas to the sample; and a step of stopping radiating the ion beam to the sample. The step of radiating the ion beam is performed earlier than the step of supplying the gas or the step of stopping supplying the gas is performed earlier than the step of stopping radiating the ion beam.
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