- 专利标题: Reference voltage generator
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申请号: US16465992申请日: 2017-12-01
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公开(公告)号: US10545527B2公开(公告)日: 2020-01-28
- 发明人: Samuli Hallikainen
- 申请人: Nordic Semiconductor ASA
- 申请人地址: NO Trondheim
- 专利权人: Nordic Semiconductor ASA
- 当前专利权人: Nordic Semiconductor ASA
- 当前专利权人地址: NO Trondheim
- 代理机构: Klarquist Sparkman, LLP
- 优先权: GB1620541.1 20161202
- 国际申请: PCT/GB2017/053628 WO 20171201
- 国际公布: WO2018/100390 WO 20180607
- 主分类号: G05F3/26
- IPC分类号: G05F3/26
摘要:
A reference voltage circuit 2 comprises: a bandgap circuit portion comprising first and second reference transistors (Q1, Q2) and a current source arranged to drive the first and second reference transistor at different current densities, wherein the first and second reference transistors are connected to first and second nodes (N1, N2) respectively; an operational transconductance amplifier (M4, M5, M10, M11, M12) arranged to produce an output current that is proportional to a difference between a voltage at the first node and a voltage at the second node; an output current mirror circuit portion (M3) arranged to generate a mirror current that is a scaled version of the output current and drive said mirror current through a load (R3) so as to produce a reference voltage (Vref); and a reference monitoring circuit portion (6) arranged to monitor the operational transconductance amplifier and generate a flag (Vready) if a current flowing through the operational transconductance amplifier exceeds a threshold.
公开/授权文献
- US20190302825A1 REFERENCE VOLTAGE GENERATOR 公开/授权日:2019-10-03
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