发明授权
- 专利标题: Method for preparing semiconductor nanocrystal siloxane composite resin composition
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申请号: US15917956申请日: 2018-03-12
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公开(公告)号: US10544359B2公开(公告)日: 2020-01-28
- 发明人: Byeong-Soo Bae , Hwea Yoon Kim , Junho Jang
- 申请人: KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY
- 申请人地址: KR Daejeon
- 专利权人: KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY
- 当前专利权人: KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY
- 当前专利权人地址: KR Daejeon
- 代理机构: Lex IP Meister, PLLC
- 优先权: KR10-2017-0037832 20170324
- 主分类号: H01B1/08
- IPC分类号: H01B1/08 ; C09K11/02 ; C08G77/52 ; C09K11/54 ; H01L33/50 ; H01L33/56 ; C09K11/70 ; C09K11/56 ; C09K11/88 ; C08L83/04 ; C08G77/00 ; C08G77/20
摘要:
The present invention relates to a method for preparing a semiconductor nanocrystal siloxane composite resin composition, and a cured product using the same. In the preparation method, the semiconductor nanocrystals are added during a non-hydrolytic sol-gel condensation reaction for forming a siloxane structure so that a siloxane resin having a dense inorganic network, which includes a siloxane bond, is encapsulated and thus is dispersed in the semiconductor nanocrystals through a chemical interaction and a chemical bond, thereby preventing a reduction in inherent characteristics (quantum efficiency) of the semiconductor nanocrystals resulting from an external oxidizing environment. Accordingly, when the curing of the resin composition is carried out, a cured product, which can be applied to various applications including a semiconductor nanocrystal siloxane composite having excellent reliability, can be provided.
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