A half bridge circuit is disclosed. The circuit includes a GaN-based substrate, an oscillator on the substrate, and one or more components forming one or more of a low side power transistor, a low side driver, low side logic circuitry, a high side power transistor, a high side driver, and high side logic circuitry. At least one of the low side power transistor, the low side driver, the low side logic circuitry, the high side power transistor, the high side driver, and the high side logic circuitry is at least partially formed on the substrate. The oscillator is configured to generate non-overlapping pulses, and the non-overlapping pulses are separated by a dead time.