- 专利标题： Unguarded schottky barrier diodes
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申请号： US15615090申请日： 2017-06-06
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公开(公告)号： US10535783B2公开(公告)日： 2020-01-14
- 发明人: Vladimir Frank Drobny
- 申请人： TEXAS INSTRUMENTS INCORPORATED
- 申请人地址： US TX Dallas
- 专利权人： TEXAS INSTRUMENTS INCORPORATED
- 当前专利权人： TEXAS INSTRUMENTS INCORPORATED
- 当前专利权人地址： US TX Dallas
- 代理商 Andrew R. Ralston; Charles A. Brill; Frank D. Cimino
- 主分类号： H01L29/87
- IPC分类号： H01L29/87 ; H01L29/872 ; H01L29/66
摘要：
One embodiment of the disclosure relates to an unguarded Schottky barrier diode. The diode includes a cathode that has a recessed region and a dielectric interface surface that laterally extends around a perimeter of the recessed region. The diode further includes an anode that conforms to the recessed region. A dielectric layer extends over the dielectric interface surface of the cathode and further extends over a portion of the anode near the perimeter. Other devices and methods are also disclosed.
公开/授权文献
- US20170278984A1 UNGUARDED SCHOTTKY BARRIER DIODES 公开/授权日：2017-09-28
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