- 专利标题: Semiconductor device and driving method thereof
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申请号: US14697662申请日: 2015-04-28
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公开(公告)号: US10535689B2公开(公告)日: 2020-01-14
- 发明人: Yoshiyuki Kurokawa
- 申请人: Semiconductor Energy Laboratory Co., Ltd.
- 申请人地址: JP Kanagawa-ken
- 专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址: JP Kanagawa-ken
- 代理机构: Robinson Intellectual Property Law Office
- 代理商 Eric J. Robinson
- 优先权: JP2010-028762 20100212
- 主分类号: H01L27/146
- IPC分类号: H01L27/146 ; H01L27/12 ; H01L29/786 ; H04N5/232 ; H04N5/335 ; H04N5/374 ; H01L31/032 ; G01J1/44
摘要:
A semiconductor device including photosensor capable of imaging with high resolution is disclosed. The semiconductor device includes the photosensor having a photodiode, a first transistor, and a second transistor. The photodiode generates an electric signal in accordance with the intensity of light. The first transistor stores charge in a gate thereof and converts the stored charge into an output signal. The second transistor transfers the electric signal generated by the photodiode to the gate of the first transistor and holds the charge stored in the gate of the first transistor. The first transistor has a back gate and the threshold voltage thereof is changed by changing the potential of the back gate.
公开/授权文献
- US20150236061A1 SEMICONDUCTOR DEVICE AND DRIVING METHOD THEREOF 公开/授权日:2015-08-20
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