- 专利标题： Semiconductor structure, integrated circuit device, and method of forming semiconductor structure
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申请号： US15893452申请日： 2018-02-09
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公开(公告)号： US10535613B2公开(公告)日： 2020-01-14
- 发明人: Shih-Hsien Ma , Haw-Chuan Wu , Shih-Hao Tsai , Yu-Chuan Lin
- 申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 申请人地址： TW Hsinchu
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 当前专利权人地址： TW Hsinchu
- 代理机构： Maschoff Brennan
- 主分类号： H01L23/552
- IPC分类号： H01L23/552 ; H01L21/027
摘要：
A semiconductor structure, integrated circuit device, and method of forming semiconductor structure are provided. In various embodiments, the semiconductor structure includes a substrate containing a high topography region and a low topography region, an outer protection wall on an outer peripheral portion of the high topography region next to the low topography region, and an anti-reflective coating over the outer protection wall, the high topography region, and the low topography region.
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