- 专利标题： Method of cyclic plasma etching of organic film using carbon-based chemistry
-
申请号： US15963228申请日： 2018-04-26
-
公开(公告)号： US10535531B2公开(公告)日： 2020-01-14
- 发明人: Vinayak Rastogi , Alok Ranjan
- 申请人： Tokyo Electron Limited
- 申请人地址： JP Tokyo
- 专利权人： TOKYO ELECTRON LIMITED
- 当前专利权人： TOKYO ELECTRON LIMITED
- 当前专利权人地址： JP Tokyo
- 代理机构： Rothwell, Figg, Ernst & Manbeck, P.C.
- 主分类号： H01L21/311
- IPC分类号： H01L21/311 ; H01L21/3065 ; H01L21/3105
摘要：
A method of etching is described. The method includes providing a substrate having a first material containing organic material and a second material that is different from the first material, forming a first chemical mixture by plasma-excitation of a first process gas containing an inert gas, and exposing the first material on the substrate to the first chemical mixture. Thereafter, the method includes forming a second chemical mixture by plasma-excitation of a second process gas containing C and O, and optionally a noble element, and exposing the first material on the substrate to the second plasma-excited process gas to selectively etch the first material relative to the second material.
公开/授权文献
信息查询
IPC分类:
