- 专利标题： Nanoscale light emitting diode, and methods of making same
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申请号： US15980868申请日： 2018-05-16
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公开(公告)号： US10529938B2公开(公告)日： 2020-01-07
- 发明人: Hong Koo Kim , Daud Hasan Emon
- 申请人： UNIVERSITY OF PITTSBURGH-OF THE COMMONWEALTH SYSTEM OF HIGHER EDUCATION
- 申请人地址： US PA Pittsburgh
- 专利权人： University of Pittsburgh—Of the Commonwealth System of Higher Education
- 当前专利权人： University of Pittsburgh—Of the Commonwealth System of Higher Education
- 当前专利权人地址： US PA Pittsburgh
- 代理机构： Eckert Seamans Cherin & Mellott, LLC
- 代理商 Philip E. Levy
- 主分类号： H01L51/50
- IPC分类号： H01L51/50 ; H01L51/56 ; H01L51/00
摘要：
Various light emitting diode device embodiments that include emissive material elements, e.g., core-shell quantum dots, that are either (i) provided in nanoscale holes provided in an insulating layer positioned between an electron supply/transport layer and a hole supply/transport layer, or (ii) provided on a suspension layer positioned above and covering a nanoscale hole in such an insulating layer. Also, various methods of making such light emitting diode devices, including lithographic and non-lithographic methods.
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