- 专利标题： High pressure wafer processing systems and related methods
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申请号： US16292289申请日： 2019-03-04
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公开(公告)号： US10529603B2公开(公告)日： 2020-01-07
- 发明人: Qiwei Liang , Srinivas D. Nemani , Adib M. Khan , Venkata Ravishankar Kasibhotla , Sultan Malik , Sean Kang , Keith Tatseun Wong
- 申请人： Micromaterials, LLC
- 申请人地址： US DE Wilmington
- 专利权人： Micromaterials, LLC
- 当前专利权人： Micromaterials, LLC
- 当前专利权人地址： US DE Wilmington
- 代理机构： Patterson + Sheridan, LLP
- 主分类号： H01L21/67
- IPC分类号： H01L21/67 ; C23C16/52 ; H01L21/324 ; H01L21/687 ; H01L21/768
摘要：
A high-pressure processing system for processing a substrate includes a first chamber, a pedestal positioned within the first chamber to support the substrate, a second chamber adjacent the first chamber, a vacuum processing system configured to lower a pressure within the second chamber to near vacuum, a valve assembly between the first chamber and the second chamber to isolate the pressure within the first chamber from the pressure within the second chamber, and a gas delivery system configured to introduce a processing gas into the first chamber and to increase the pressure within the first chamber to at least 10 atmospheres while the processing gas is in the first chamber and while the first chamber is isolated from the second chamber.
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