- 专利标题: Production method for EL device
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申请号: US16064022申请日: 2017-02-27
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公开(公告)号: US10510993B1公开(公告)日: 2019-12-17
- 发明人: Tokuo Yoshida
- 申请人: Sharp Kabushiki Kaisha
- 申请人地址: JP Sakai
- 专利权人: Sharp Kabushiki Kaisha
- 当前专利权人: Sharp Kabushiki Kaisha
- 当前专利权人地址: JP Sakai
- 代理机构: Keating & Bennett, LLP
- 国际申请: PCT/JP2017/007405 WO 20170227
- 国际公布: WO2018/154766 WO 20180830
- 主分类号: H01L51/56
- IPC分类号: H01L51/56 ; H01L27/32 ; H01L51/00
摘要:
The disclosure provides a production method for an EL device including a base material, a TFT layer, and an EL layer; the production method including: forming at least a portion of the base material from a first resin film obtained by curing a first solution applied and a second resin film obtained by curing a second solution applied, wherein a viscosity of the first solution is made higher than a viscosity of the second solution.
公开/授权文献
- US20190363301A1 PRODUCTION METHOD FOR EL DEVICE 公开/授权日:2019-11-28
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