- 专利标题: Bond structures and the methods of forming the same
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申请号: US16388513申请日: 2019-04-18
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公开(公告)号: US10510699B2公开(公告)日: 2019-12-17
- 发明人: Chen-Hua Yu , Wen-Chih Chiou , Ming-Fa Chen , Yi-Hsiu Chen
- 申请人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址: TW Hsin-Chu
- 专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址: TW Hsin-Chu
- 代理机构: Slater Matsil, LLP
- 主分类号: H01L21/768
- IPC分类号: H01L21/768 ; H01L23/522 ; H01L21/3105 ; H01L23/00 ; H01L21/66
摘要:
A method includes forming a first conductive feature and a second conductive feature, forming a metal pad over and electrically connected to the first conductive feature, and forming a passivation layer covering edge portions of the metal pad, with a center portion of a top surface of the metal pad exposed through an opening in the metal pad. A first dielectric layer is formed to cover the metal pad and the passivation layer. A bond pad is formed over the first dielectric layer, and the bond pad is electrically coupled to the second conductive feature. A second dielectric layer is deposited to encircle the bond pad. A planarization is performed to level a top surface of the second dielectric layer with the bond pad. At a time after the planarization is performed, an entirety of the top surface of the metal pad is in contact with dielectric materials.
公开/授权文献
- US20190252335A1 Bond Structures and the Methods of Forming the Same 公开/授权日:2019-08-15
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