- 专利标题： Power semiconductor module arrangement and method for producing the same
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申请号： US15977119申请日： 2018-05-11
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公开(公告)号： US10510559B2公开(公告)日： 2019-12-17
- 发明人: Marianna Nomann , Elmar Kuehle
- 申请人： Infineon Technologies AG
- 申请人地址： DE Neubiberg
- 专利权人： Infineon Technologies AG
- 当前专利权人： Infineon Technologies AG
- 当前专利权人地址： DE Neubiberg
- 代理机构： Murphy, Bilak & Homiller, PLLC
- 优先权： EP17170743 20170512
- 主分类号： H01L21/48
- IPC分类号： H01L21/48 ; H01L23/498 ; H01L23/14 ; H01L23/49 ; H01L23/15 ; H01L23/00
摘要：
A power semiconductor module arrangement includes a base plate configured to be arranged in a housing, a contact element configured to, when the base plate is arranged in the housing, provide an electrical connection between the inside and the outside of the housing, and a connecting element configured to connect the contact element to the base plate. The connecting element includes a first electrically insulating layer, a second electrically insulating layer configured to attach the contact element to the first electrically insulating layer, and a third electrically insulating layer configured to attach the first electrically insulating layer to the base plate.
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