- 专利标题： Write scheme for a static random access memory (SRAM)
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申请号： US15903826申请日： 2018-02-23
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公开(公告)号： US10510385B2公开(公告)日： 2019-12-17
- 发明人: Xiaoli Hu , Wei Zhao , Hao Pu
- 申请人： GLOBALFOUNDRIES INC.
- 申请人地址： US CA Santa Clara
- 专利权人： GLOBALFOUNDRIES U.S. INC.
- 当前专利权人： GLOBALFOUNDRIES U.S. INC.
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Roberts Mlotkowski Safran Cole & Calderon, P.C.
- 代理商 Michael Le Strange; Andrew M. Calderon
- 主分类号： G11C7/12
- IPC分类号： G11C7/12 ; G11C11/419
摘要：
A structure includes a write driver circuit configured to drive both a true bitline side and a complement bitline side up to a power supply and down to ground such that one of the true bitline side and the complement bitline side is driven to ground and another of the true bitline side and the complement bitline side is driven to a high level at a same time and before a precharge below a level of the power supply of the one of the true bitline side and the complement bitline side.
公开/授权文献
- US20190267052A1 WRITE SCHEME FOR A STATIC RANDOM ACCESS MEMORY (SRAM) 公开/授权日：2019-08-29
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