- 专利标题： Methods used in forming an array of elevationally-extending strings of memory cells, methods of forming an array of elevationally-extending strings of memory cells, and methods of forming an array of vertical strings of memory cells
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申请号： US16111584申请日： 2018-08-24
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公开(公告)号： US10446578B1公开(公告)日： 2019-10-15
- 发明人: Collin Howder , Justin B. Dorhout , Anish A. Khandekar , Mark W. Kiehlbauch , Nancy M. Lomeli
- 申请人： Micron Technology, Inc.
- 申请人地址： US ID Boise
- 专利权人： Micron Technology, Inc.
- 当前专利权人： Micron Technology, Inc.
- 当前专利权人地址： US ID Boise
- 代理机构： Wells St. John P.S.
- 主分类号： H01L27/11582
- IPC分类号： H01L27/11582 ; H01L27/11521 ; H01L27/11556 ; H01L21/02 ; H01L27/11568 ; H01L21/28
摘要：
A method used in forming an array of elevationally-extending strings of memory cells comprises forming a lower stack comprising vertically-alternating insulative tiers and wordline tiers. Lower channel openings are in the lower stack. A bridge is epitaxially grown that covers individual of the lower channel openings. A lower void space is beneath individual of the bridges in the individual lower channel openings. An upper stack is formed above the lower stack. The upper stack comprises vertically-alternating insulative tiers and wordline tiers. Upper channel openings are formed into the upper stack to the individual bridges to form interconnected channel openings individually comprising one of the individual lower channel openings and individual of the upper channel openings. The interconnected channel openings individually have one of the individual bridges there-across. The individual bridges are penetrated through to uncover individual of the lower void spaces. Transistor channel material is formed in an upper portion of the interconnected channel openings elevationally along the vertically-alternating tiers in the upper stack.
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