- 专利标题： Semiconductor device, electronic circuit having the same, and semiconductor device forming method
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申请号： US15858529申请日： 2017-12-29
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公开(公告)号： US10446485B2公开(公告)日： 2019-10-15
- 发明人: Shinichi Uchida
- 申请人： Renesas Electronics Corporation
- 申请人地址： JP Tokyo
- 专利权人： RENESAS ELECTRONICS CORPORATION
- 当前专利权人： RENESAS ELECTRONICS CORPORATION
- 当前专利权人地址： JP Tokyo
- 代理机构： McGinn I.P. Law Group, PLLC.
- 优先权： JP2017-076933 20170407
- 主分类号： H01L23/522
- IPC分类号： H01L23/522 ; H01L49/02 ; H01L23/58
摘要：
A semiconductor device includes: a plurality of first wires formed in a first layer and indicating fixed potentials; and an inductor formed in a second layer stacked on the first layer, and wiring widths of the first wires located within a range of a formation region of the inductor in a plan view among the plurality of first wires are formed narrower than wiring widths of the first wires located outside the range of the formation region of the inductor.
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