- 专利标题: Semiconductor apparatus
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申请号: US15995113申请日: 2018-05-31
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公开(公告)号: US10438941B2公开(公告)日: 2019-10-08
- 发明人: Yi-Yun Tsai , Chih-Hung Chen , Chin-Fu Chen
- 申请人: UBIQ Semiconductor Corp.
- 申请人地址: TW Hsinchu County
- 专利权人: UBIQ Semiconductor Corp.
- 当前专利权人: UBIQ Semiconductor Corp.
- 当前专利权人地址: TW Hsinchu County
- 代理机构: JCIPRNET
- 优先权: TW107103915A 20180205
- 主分类号: H01L27/02
- IPC分类号: H01L27/02 ; H01L29/866
摘要:
A semiconductor apparatus including a substrate, an electrostatic discharge protection device, a resistor device, and a first metal layer is provided. The substrate defines a pad area and includes a first area and a second area. The first area has a recess, the second area is disposed in the recess, and the pad area is partially overlapped with the first area and the second area. The electrostatic discharge protection device is disposed in the first area of the substrate. The resistor device is disposed in the second area of the substrate. The first metal layer is disposed above and electrically connected to the electrostatic discharge protection device and the resistor device.
公开/授权文献
- US20190244952A1 SEMICONDUCTOR APPARATUS 公开/授权日:2019-08-08
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