Invention Grant
- Patent Title: Thin film transistor substrate, an organic light-emitting display apparatus using the same, and a method of manufacturing the thin film transistor substrate
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Application No.: US15461772Application Date: 2017-03-17
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Publication No.: US10431641B2Publication Date: 2019-10-01
- Inventor: Hyunbeen Hwang , Minchul Shin
- Applicant: SAMSUNG DISPLAY CO., LTD.
- Applicant Address: KR Yongin-si, Gyeonggi-Do
- Assignee: SAMSUNG DISPLAY CO., LTD.
- Current Assignee: SAMSUNG DISPLAY CO., LTD.
- Current Assignee Address: KR Yongin-si, Gyeonggi-Do
- Agency: F. Chau & Associates, LLC
- Priority: KR10-2016-0032072 20160317
- Main IPC: H01L29/08
- IPC: H01L29/08 ; H01L27/32 ; H01L27/12
Abstract:
A thin film transistor (TFT) substrate includes a substrate and a first electrode disposed on the substrate. The first electrode is one of a source electrode and a drain electrode. The TFT further includes a first insulating layer disposed on the first electrode and a second electrode disposed on the first insulating layer. The second electrode is the other one of the source electrode and the drain electrode. The TFT additionally includes a semiconductor layer disposed on the first electrode, the first insulating layer, and the second electrode. The TFT further includes a second insulating layer disposed on the semiconductor layer. The TFT additionally includes a gate electrode disposed on the second insulating layer and overlapping the semiconductor layer. The TFT further includes a pixel electrode that includes a same material as the gate electrode and is electrically connected to the second electrode.
Public/Granted literature
Information query
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