- 专利标题: Modified self-aligned quadruple patterning (SAQP) processes using cut pattern masks to fabricate integrated circuit (IC) cells with reduced area
-
申请号: US15408796申请日: 2017-01-18
-
公开(公告)号: US10418244B2公开(公告)日: 2019-09-17
- 发明人: Stanley Seungchul Song , Giridhar Nallapati , Periannan Chidambaram
- 申请人: QUALCOMM Incorporated
- 申请人地址: US CA San Diego
- 专利权人: QUALCOMM Incorporated
- 当前专利权人: QUALCOMM Incorporated
- 当前专利权人地址: US CA San Diego
- 代理机构: Withrow & Terranova, PLLC
- 主分类号: H01L21/768
- IPC分类号: H01L21/768 ; H01L23/528 ; H01L27/02 ; H01L21/033 ; G03F7/00 ; H01L21/308 ; H01L27/118
摘要:
Aspects describing modified self-aligned quadruple patterning (SAQP) processes using cut pattern masks to fabricate integrated circuit (IC) cells with reduced area are disclosed. In one aspect, a modified SAQP process includes disposing multiple mandrels. First spacers are disposed on either side of each mandrel, and second spacers are disposed on either side of each first spacer. A cut pattern mask is disposed over the second spacers and includes openings that expose second spacers corresponding to locations in which voltage rails are to be disposed. The voltage rails are formed by removing the second spacers exposed by the openings in the cut pattern mask, and disposing the voltage rails in the corresponding locations left vacant by removing the second spacers. Routing lines are disposed over routing tracks formed between each set of the remaining second spacers to allow for interconnecting of active devices formed in the IC cell.
公开/授权文献
信息查询
IPC分类: