- 专利标题： Apparatus and method for forming organic thin film transistor
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申请号： US15488406申请日： 2017-04-14
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公开(公告)号： US10388896B2公开(公告)日： 2019-08-20
- 发明人: Yang Wei , Shou-Shan Fan
- 申请人： Tsinghua University , HON HAI PRECISION INDUSTRY CO., LTD.
- 申请人地址： CN Beijing TW New Taipei
- 专利权人： Tsinghua University,HON HAI PRECISION INDUSTRY CO., LTD.
- 当前专利权人： Tsinghua University,HON HAI PRECISION INDUSTRY CO., LTD.
- 当前专利权人地址： CN Beijing TW New Taipei
- 代理机构： ScienBiziP, P.C.
- 优先权： CN201610384814 20160602
- 主分类号： H01L51/00
- IPC分类号： H01L51/00 ; H01L51/05 ; C23C14/24 ; H01L21/02 ; C23C14/12 ; C23C14/26
摘要：
A method for forming an organic thin film transistor is provided. An organic semiconductor layer, a source electrode, a drain electrode, a gate electrode, and an insulating layer are formed on an insulating substrate. A method for forming the organic semiconductor layer is provided. An evaporating source is provided, and the evaporating source and the insulating substrate are spaced from each other. The carbon nanotube film structure is heated to gasify the organic semiconductor material to form the organic semiconductor layer on a depositing surface.
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