- 专利标题: Plasma processing apparatus
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申请号: US15829096申请日: 2017-12-01
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公开(公告)号: US10388558B2公开(公告)日: 2019-08-20
- 发明人: Yasuharu Sasaki , Akira Ishikawa , Ryo Chiba
- 申请人: TOKYO ELECTRON LIMITED
- 申请人地址: JP Tokyo
- 专利权人: TOKYO ELECTRON LIMITED
- 当前专利权人: TOKYO ELECTRON LIMITED
- 当前专利权人地址: JP Tokyo
- 代理机构: Rothwell, Figg, Ernst & Manbeck, P.C.
- 优先权: JP2016-235595 20161205; JP2017-174946 20170912
- 主分类号: H01L21/683
- IPC分类号: H01L21/683 ; H01L21/687
摘要:
A plasma processing apparatus includes an electrostatic chuck and a lifter pin. The electrostatic chuck has a mounting surface on which a target object is mounted and a back surface opposite to the mounting surface, and a through hole formed through the mounting surface and the back surface. The lifter pin is at least partially formed of an insulating member and has a leading end accommodated in the through hole. The lifter pin vertically moves with respect to the mounting surface to vertically transfer the target object. A conductive material is provided at at least one of a leading end portion of the lifter pin which corresponds to the through hole and a wall surface of the through hole which faces the lifter pin.
公开/授权文献
- US20180158711A1 PLASMA PROCESSING APPARATUS 公开/授权日:2018-06-07
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