- 专利标题: Manufacturing method for semiconductor device
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申请号: US15695190申请日: 2017-09-05
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公开(公告)号: US10381245B2公开(公告)日: 2019-08-13
- 发明人: Yasuhiro Taguchi
- 申请人: SII Semiconductor Corporation
- 申请人地址: JP Chiba
- 专利权人: ABLIC INC.
- 当前专利权人: ABLIC INC.
- 当前专利权人地址: JP Chiba
- 代理机构: Brinks Gilson & Lione
- 优先权: JP2016-173754 20160906; JP2017-142522 20170724
- 主分类号: H01L21/48
- IPC分类号: H01L21/48 ; H01L21/56 ; H01L21/78 ; H01L23/31 ; H01L23/495 ; H01L23/00
摘要:
Provided is a manufacturing method for a semiconductor device using stamping press working which is capable of securing an island having substantially the same size as that of a related art even when a lead frame thickness is increased. A portion between the island and the inner lead is punched with a punch having a width of equal to or larger than a minimum required plate thickness for stamping press working. A periphery of the island is squeezed from an island back surface. A gap between the island and the inner lead is set to be smaller than a thickness of the lead frame, and at the same time, the thickness of the lead frame in the periphery of the island is set smaller than an original plate thickness of the lead frame, thereby obtaining a required area of the island.
公开/授权文献
- US20180068869A1 MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE 公开/授权日:2018-03-08
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